1/10 july 2001 n high speed: t pd = 10ns (typ.) at v cc = 6v n low power dissipation: i cc = 4 m a(max.) at t a =25c n high noise immunity: v nih = v nil = 28 % v cc (min.) n symmetrical output impedance: |i oh | = i ol = 6ma (min) n balanced propagation delays: t plh @ t phl n wide operating voltage range: v cc (opr) = 2v to 6v n pin and function compatible with 74 series 241 description the 74hc241 is an advanced high-speed cmos octal bus buffer (3-state) fabricated with silicon gate c 2 mos technology. each g and g control inputs governs four bus buffers. this device is designed to be used with 3 state memory address drivers, etc. all inputs are equipped with protection circuits against static discharge and transient excess voltage. m74hc241 octal bus buffer with 3 state outputs (non inverted) pin connection and iec logic symbols order codes package tube t & r dip M74HC241B1R sop m74hc241m1r m74hc241rm13tr tssop m74hc241ttr tssop dip sop
m74hc241 2/10 input and output equivalent circuit pin description truth table x : dont care z : high impedance absolute maximum ratings absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditi ons is not implied (*) 500mw at 65 c ; derate to 300mw by 10mw/ c from 65 c to 85 c recommended operating conditions pin no symbol name and function 11g output enable input 2, 4, 6, 8 1a1 to 1a4 data inputs 9, 7, 5, 3 2y1 to 2y4 data outputs 11, 13, 15, 17 2a1 to 2a4 data inputs 18, 16, 14, 12 1y1 to 1y4 data outputs 19 2g output enable input 10 gnd ground (0v) 20 v cc positive supply voltage inputs output inputs output 1g 1an 1yn 2g 2an 2yn lllhll lhhhhh hxzlxz symbol parameter value unit v cc supply voltage -0.5 to +7 v v i dc input voltage -0.5 to v cc + 0.5 v v o dc output voltage -0.5 to v cc + 0.5 v i ik dc input diode current 20 ma i ok dc output diode current 20 ma i o dc output current 35 ma i cc or i gnd dc v cc or ground current 70 ma p d power dissipation 500(*) mw t stg storage temperature -65 to +150 c t l lead temperature (10 sec) 300 c symbol parameter value unit v cc supply voltage 2 to 6 v v i input voltage 0 to v cc v v o output voltage 0 to v cc v t op operating temperature -55 to 125 c t r , t f input rise and fall time v cc = 2.0v 0 to 1000 ns v cc = 4.5v 0 to 500 ns v cc = 6.0v 0 to 400 ns
m74hc241 3/10 dc specifications symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. v ih high level input voltage 2.0 1.5 1.5 1.5 v 4.5 3.15 3.15 3.15 6.0 4.2 4.2 4.2 v il low level input voltage 2.0 0.5 0.5 0.5 v 4.5 1.35 1.35 1.35 6.0 1.8 1.8 1.8 v oh high level output voltage 2.0 i o =-20 m a 1.9 2.0 1.9 1.9 v 4.5 i o =-20 m a 4.4 4.5 4.4 4.4 6.0 i o =-20 m a 5.9 6.0 5.9 5.9 4.5 i o =-6.0 ma 4.18 4.31 4.13 4.10 6.0 i o =-7.8 ma 5.68 5.8 5.63 5.60 v ol low level output voltage 2.0 i o =20 m a 0.0 0.1 0.1 0.1 v 4.5 i o =20 m a 0.0 0.1 0.1 0.1 6.0 i o =20 m a 0.0 0.1 0.1 0.1 4.5 i o =6.0 ma 0.17 0.26 0.33 0.40 6.0 i o =7.8 ma 0.18 0.26 0.33 0.40 i i input leakage current 6.0 v i = v cc or gnd 0.1 1 1 m a i oz high impedance output leakage current 6.0 v i = v ih or v il v o = v cc or gnd 0.5 5 10 m a i cc quiescent supply current 6.0 v i = v cc or gnd 44080 m a
m74hc241 4/10 ac electrical characteristics (c l = 50 pf, input t r = t f = 6ns) capacitive characteristics 1) c pd is defined as the value of the ics internal equivalent capacitance which is calculated from the operating current consumption without load. (refer to test circuit). average operating current can be obtained by the following equation. i cc(opr) = c pd x v cc x f in + i cc /8 (per circuit) symbol parameter test condition value unit v cc (v) c l (pf) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. t tlh t thl output transition time 2.0 50 25 60 75 90 ns 4.5 7121918 6.0 6101315 t plh t phl propagation delay time 2.0 50 36 90 115 135 ns 4.5 12 18 23 27 6.0 10 15 20 23 2.0 150 51 130 165 195 ns 4.5 17 26 33 39 6.0 14 22 28 33 t pzl t pzh high impedance output enable time 2.0 50 r l = 1 k w 48 125 155 190 ns 4.5 16 25 31 38 6.0 14 21 25 32 2.0 150 r l = 1 k w 63 165 205 250 ns 4.5 21 33 41 50 6.0 18 28 35 43 t plz t phz high impedance output disable time 2.0 50 r l = 1 k w 32 125 155 190 ns 4.5 15 25 31 38 6.0 14 21 26 32 symbol parameter test condition value unit v cc (v) t a = 25c -40 to 85c -55 to 125c min. typ. max. min. max. min. max. c in input capacitance 5.0 5101010pf c out output capacitance 5.0 10 pf c pd power dissipation capacitance (note 1) 5.0 33 pf
m74hc241 5/10 test circuit c l = 50pf/150pf or equivalent (includes jig and probe capacitance) r 1 = 1k w or equivalent r t = z out of pulse generator (typically 50 w ) waveform 1 :propagation delay time (f=1mhz; 50% duty cycle) test switch t plh , t phl open t pzl , t plz v cc t pzh , t phz gnd
m74hc241 6/10 waveform 2 : output enable and disable time (f=1mhz; 50% duty cycle)
m74hc241 7/10 dim. mm. inch min. typ max. min. typ. max. a1 0.254 0.010 b 1.39 1.65 0.055 0.065 b 0.45 0.018 b1 0.25 0.010 d 25.4 1.000 e 8.5 0.335 e 2.54 0.100 e3 22.86 0.900 f 7.1 0.280 i 3.93 0.155 l 3.3 0.130 z 1.34 0.053 plastic dip-20 (0.25) mechanical data p001j
m74hc241 8/10 dim. mm. inch min. typ max. min. typ. max. a 2.65 0.104 a1 0.1 0.2 0.004 0.008 a2 2.45 0.096 b 0.35 0.49 0.014 0.019 b1 0.23 0.32 0.009 0.012 c 0.5 0.020 c1 45 (typ.) d 12.60 13.00 0.496 0.512 e 10.00 10.65 0.393 0.419 e 1.27 0.050 e3 11.43 0.450 f 7.40 7.60 0.291 0.300 l 0.50 1.27 0.020 0.050 m 0.75 0.029 s8 (max.) so-20 mechanical data po13l
m74hc241 9/10 dim. mm. inch min. typ max. min. typ. max. a 1.2 0.047 a1 0.05 0.15 0.002 0.004 0.006 a2 0.8 1 1.05 0.031 0.039 0.041 b 0.19 0.30 0.007 0.012 c 0.09 0.20 0.004 0.0089 d 6.4 6.5 6.6 0.252 0.256 0.260 e 6.2 6.4 6.6 0.244 0.252 0.260 e1 4.3 4.4 4.48 0.169 0.173 0.176 e 0.65 bsc 0.0256 bsc k0 80 8 l 0.45 0.60 0.75 0.018 0.024 0.030 tssop20 mechanical data c e b a2 a e1 d 1 pin 1 identification a1 l k e 0087225c
m74hc241 10/10 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2001 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco singapore - spain - sweden - switzerland - united kingdom ? http://www.st.com
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